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Synthesis of CdS nanocrystals in polymeric films studied by in-situ GID and GISAXS

机译:原位GID和GISAXS研究聚合膜中CdS纳米晶体的合成

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摘要

In this work, we describe the synthesis of CdS nanocrystals in thin polymeric films by in-situ Grazing Incidence Diffraction (GID) and Grazing Incidence Small Angle Scattering (GISAXS). The 2D GISAXS patterns indicate how the precursor structure is altered as the temperature is varied from 25°C to 300°C. At 150°C, the CdS nanocrystals start to arrange themselves in a hexagonal lattice with a lattice parameter of 27 A. The diffraction intensity from the hexagonal lattice reaches a maximum at 170"C and decreases steadily upon further heating above 220°C indicating loss of symmetry. Correspondingly, the GID scans at 170°C show strong crystalline peaks from cubic CdS nanocrystals that are about 2 nm size. The results indicate that a temperature of 170°C is sufficient to synthesize CdS nanocrystals without degradation of the polymer matrix (Topas) in thin films (about 30nm). © 2015 Materials Research Society.
机译:在这项工作中,我们描述了通过原位掠入射入射衍射(GID)和掠入射小角度散射(GISAXS)在聚合物薄膜中合成CdS纳米晶体。 2D GISAXS模式表明随着温度从25°C到300°C的变化,前体结构如何变化。在150°C时,CdS纳米晶体开始排列成六方晶格,其晶格参数为27A。六方晶格的衍射强度在170“ C时达到最大值,并在进一步加热到220°C以上时稳定降低。相应地,在170°C的GID扫描显示立方立方CdS纳米晶体的强结晶峰约为2 nm大小。结果表明170°C的温度足以合成CdS纳米晶体而不会降解聚合物基质(薄膜(约30nm)中的Topas)©2015材料研究协会。

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